Unbalanced Czarnul Resistive MOS Circuit in the Symmetrical MOSFET-C Filters
Abstract
The analysis of influence of mismatches of the MOS transistor array on center frequency ω0 and Q-factor of the MOSFET-C filter poles is performed. As a useful parameter characterizing mismatches of transistors, the dispersion of the threshold voltage VT and transconductance K per unit area in the VLSI process is considered The optimal formula for the control gate voltages VG1, VG2 of MOS transistors, minimizing the absolute errors of ω0 , Q parameters is given.
Keywords
MOS filters design, MOS resistive circuitsPersistent identifier
http://hdl.handle.net/11012/58421Document type
Peer reviewedDocument version
Final PDFSource
Radioengineering. 1996, vol. 5, č. 3, s. 23-26. ISSN 1210-2512http://www.radioeng.cz/fulltexts/1996/96_03_06.pdf
Collections
- 1996/3 [6]