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X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray ...
Imaging of near-field interference patterns by a-SNOM – influence of illumination wavelength and polarization state
(Optical Society of America, 2017-07-05)
Scanning near-field optical microscopy (SNOM) in combination with interference structures is a powerful tool for imaging and analysis of surface plasmon polaritons (SPPs). However, the correct interpretation of SNOM images ...
Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography
(Springer Nature, 2018-06-25)
We present a comparative study of plasmonic antennas fabricated by electron beam lithography and direct focused ion beam milling. We have investigated optical and structural properties and chemical composition of gold ...