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dc.contributor.authorMojrová, Barbora
dc.date.accessioned2018-07-10T12:48:22Z
dc.date.available2018-07-10T12:48:22Z
dc.date.issued2016cs
dc.identifier.citationProceedings of the 22nd Conference STUDENT EEICT 2016. s. 690-694. ISBN 978-80-214-5350-0cs
dc.identifier.isbn978-80-214-5350-0
dc.identifier.urihttp://hdl.handle.net/11012/84021
dc.description.abstractIn this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resistivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.en
dc.formattextcs
dc.format.extent690-694cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 22nd Conference STUDENT EEICT 2016en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.subjectsilicon solar cellen
dc.subjectn-typeen
dc.subjectn-PERTen
dc.subjectSiNXen
dc.subjectpassivationen
dc.subjectcontact resistivityen
dc.titleImpact of the SiNx Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cellen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
but.event.date28.04.2016cs
but.event.titleStudent EEICT 2016cs
dc.rights.accessopenAccessen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionPublishers's versionen


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