Local Isolation Of Microscale Defective Areas In Monocrysline Silicon Solar Cells
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Date
2018
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
This article is aimed on characterization of silicon solar cells microstructural inhomogeneities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoiding leakage current flow through it.
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Proceedings of the 24th Conference STUDENT EEICT 2018. s. 518-522. ISBN 978-80-214-5614-3
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií