Characteristics Of Gallium Arsenide Solar Cellsat High Temperature
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Date
2017
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
This article reviews a work on processing of gallium arsenide (GaAs) solar cells. The performance of the cells before and after 300 _x000E_C thermal processing was correlated with topography identified by optical camera, atomic force microscope (AFM) and scanning electron microscope (SEM). Experiment indicates insignificant changes in topography of GaAs solar cells, but electrical characteristics show an excellent resistance of the samples to processing temperature.
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Proceedings of the 25st Conference STUDENT EEICT 2019. s. 680-684. ISBN 978-80-214-5735-5
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
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Peer-reviewed
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií