Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

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2013-05-03
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Mark
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EDP Sciences
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Abstract
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Cílem studie je růst struktur SiC/(SiC)1-x(AlN)x pomocí rychlé sublimační epitaxe polykrystalického zdroje (SiC)1-x(AlN)x a jejich charakterizace pomocí SEM a AFM. K dosažrení tohoto cíle bylo třeba stanovit optimální podmínky. Vyrobené struktury by mohly být použity jako polovodiče s širokým zakázaným pásem. Výsledky analýzy ukazují, že v důeeldku zvyšování teploty až do 2300 K The result of analysis shows that increasing of the growth temperature up to 2300 K umožní provést sublimační epitaxi tenkých vrstev AlN a jeho tuhého roztoku.
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en
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Creative Commons Attribution 2.0 Generic
http://creativecommons.org/licenses/by/2.0/
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