Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.

Keywords

Power amplifiers, GaN HEMT, class-F, power dissipation, heat transfer

Citation

Radioengineering. 2021 vol. 30, č. 2, s. 372-380. ISSN 1210-2512
https://www.radioeng.cz/fulltexts/2021/21_02_0372_0380.pdf

Document type

Peer-reviewed

Document version

Published version

Language of document

en

Document licence

Creative Commons Attribution 4.0 International license
http://creativecommons.org/licenses/by/4.0/