Structural Charachterization Of Aln Thin Films Obtained On Silicon Surface By Pe-Ald
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2020
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
The aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH2, - NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.
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Proceedings II of the 26st Conference STUDENT EEICT 2020: Selected Papers. s. 197-202. ISBN 978-80-214-5868-0
https://conf.feec.vutbr.cz/eeict/EEICT2020
https://conf.feec.vutbr.cz/eeict/EEICT2020
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií