Polarization anisotropy of the emission from type-II quantum dots

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k - p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
V práci studujeme polarizační odezvu emise z GaAsSb kvantových teček typu-II překrytých InAs .

Keywords

Type II quantum dots, Emission, Theory, Kvantové tečky tyu II, Emise, Teorie

Citation

PHYSICAL REVIEW B. 2015, vol. 92, issue 24, p. 241302-1-241302-5.
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.241302

Document type

Peer-reviewed

Document version

Published version

Language of document

en