Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

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el.2016.2138.pdf(170.41 KB)
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2016-09-30
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IET, The Institution of Engineering and Technology
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Abstract
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.
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memristors, hysteresis, PSM, ideal memristors, memcapacitors, meminductors, differentiable constitutive relation, pinched hysteresis loop, sinusoidal signal, integer power, fingerprint, parameter versus state map
Citation
Electronics Letters. 2016, vol. 52, issue 20, p. 1669-1670.
https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138
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Peer-reviewed
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en
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Creative Commons Attribution 3.0 Unported
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DOI
10.1049/el.2016.2138
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http://hdl.handle.net/11012/203148
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