Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
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Date
2013-04
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Advisor
Referee
Mark
Journal Title
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Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
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Citation
Radioengineering. 2013, vol. 22, č. 1, s. 132-135. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
Document type
Peer-reviewed
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Published version
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en