A Memristor as Multi-Bit Memory: Feasibility Analysis
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Date
2015-06
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Referee
Mark
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Společnost pro radioelektronické inženýrství
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Abstract
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristors-based multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell, lay grounds for full integration of memristor multi-bit memory cell.
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Radioengineering. 2015 vol. 24, č. 2, s. 425-430. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2015/15_02_0425_0430.pdf
http://www.radioeng.cz/fulltexts/2015/15_02_0425_0430.pdf
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Peer-reviewed
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en