Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions
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Date
2011-04
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Referee
Mark
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Společnost pro radioelektronické inženýrství
Abstract
This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.
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Citation
Radioengineering. 2011, vol. 20, č. 1, s. 204-208. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2011/11_01_204_208.pdf
http://www.radioeng.cz/fulltexts/2011/11_01_204_208.pdf
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Peer-reviewed
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en