Microwave Impedance Measurement for Nanoelectronics
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Date
2011-04
Authors
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The rapid progress in nanoelectronics showed an urgent need for microwave measurement of impedances extremely different from the 50Ω reference impedance of measurement instruments. In commonly used methods input impedance or admittance of a device under test (DUT) is derived from measured value of its reflection coefficient causing serious accuracy problems for very high and very low impedances due to insufficient sensitivity of the reflection coefficient to impedance of the DUT. This paper brings theoretical description and experimental verification of a method developed especially for measurement of extreme impedances. The method can significantly improve measurement sensitivity and reduce errors caused by the VNA. It is based on subtraction (or addition) of a reference reflection coefficient and the reflection coefficient of the DUT by a passive network, amplifying the resulting signal by an amplifier and measuring the amplified signal as a transmission coefficient by a common vector network analyzer (VNA). A suitable calibration technique is also presented.
Description
Citation
Radioengineering. 2011, vol. 20, č. 1, s. 276-283. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2011/11_01_276_283.pdf
http://www.radioeng.cz/fulltexts/2011/11_01_276_283.pdf
Document type
Peer-reviewed
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Published version
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Language of document
en