Unbalanced Czarnul Resistive MOS Circuit in the Symmetrical MOSFET-C Filters
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Date
1996-09
Authors
ORCID
Advisor
Referee
Mark
Journal Title
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Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The analysis of influence of mismatches of the MOS transistor array on center frequency ω0 and Q-factor of the MOSFET-C filter poles is performed. As a useful parameter characterizing mismatches of transistors, the dispersion of the threshold voltage VT and transconductance K per unit area in the VLSI process is considered The optimal formula for the control gate voltages VG1, VG2 of MOS transistors, minimizing the absolute errors of ω0 , Q parameters is given.
Description
Citation
Radioengineering. 1996, vol. 5, č. 3, s. 23-26. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/1996/96_03_06.pdf
http://www.radioeng.cz/fulltexts/1996/96_03_06.pdf
Document type
Peer-reviewed
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Published version
Date of access to the full text
Language of document
en