Ultra Low Power Tunable Transconductor
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Date
2016
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.
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Proceedings of the 22nd Conference STUDENT EEICT 2016. s. 695-699. ISBN 978-80-214-5350-0
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
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Peer-reviewed
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií