Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

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dc.contributor.authorRothman, Amnoncs
dc.contributor.authorManiš, Jaroslavcs
dc.contributor.authorDubrovskii, Vladimir G.cs
dc.contributor.authorŠikola, Tomášcs
dc.contributor.authorMach, Jindřichcs
dc.contributor.authorJoslevich, Ernestocs
dc.coverage.issue3cs
dc.coverage.volume11cs
dc.date.accessioned2021-12-21T15:56:02Z
dc.date.available2021-12-21T15:56:02Z
dc.date.issued2021-03-01cs
dc.description.abstractThe bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes-either the Gibbs-Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.en
dc.formattextcs
dc.format.extent1-9cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNanomaterials. 2021, vol. 11, issue 3, p. 1-9.en
dc.identifier.doi10.3390/nano11030624cs
dc.identifier.issn2079-4991cs
dc.identifier.other174913cs
dc.identifier.urihttp://hdl.handle.net/11012/203258
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofNanomaterialscs
dc.relation.urihttps://www.mdpi.com/2079-4991/11/3/624cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2079-4991/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectgallium nitrideen
dc.subjectnanowiresen
dc.subjectguided growthen
dc.subjectsurface-diffusionen
dc.titleKinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfacesen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-174913en
sync.item.dbtypeVAVen
sync.item.insts2021.12.21 16:56:02en
sync.item.modts2021.12.21 16:16:20en
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav fyzikálního inženýrstvícs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs
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