Optimizing Bias Point Of High Efficiency Class-B Gan Power Amplifier For The Best Efficiency

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but.event.date25.04.2019cs
but.event.titleStudent EEICT 2019cs
dc.contributor.authorFiser, Ondrej
dc.date.accessioned2020-04-16T07:19:37Z
dc.date.available2020-04-16T07:19:37Z
dc.date.issued2019cs
dc.description.abstractHigh performance amplifiers are always a demanding component in the world of wireless communication. The amplifier is the heart that drives each radio system. We have designed and developed a high performance one-stage class-B GaN power amplifier for drone applications in the S-band (at 1,6 GHz) with maximum output power 6 W. This paper compare fixed settings of the bias point option and optimized bias point for the best efficiency within the entire output power range. Applying the proposed method, that is particularly advantageous for low power performance to improve efficiency by more than 15 %.en
dc.formattextcs
dc.format.extent494-498cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 25st Conference STUDENT EEICT 2019. s. 494-498. ISBN 978-80-214-5735-5cs
dc.identifier.isbn978-80-214-5735-5
dc.identifier.urihttp://hdl.handle.net/11012/186722
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 25st Conference STUDENT EEICT 2019en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectGaNen
dc.subjectS-banden
dc.subjectRF power amplifieren
dc.subjectClass-Ben
dc.subjectPAEen
dc.subjectBias circuiten
dc.subjectMatlaben
dc.titleOptimizing Bias Point Of High Efficiency Class-B Gan Power Amplifier For The Best Efficiencyen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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