Tantalum Capacitor As A Mis Structure: Transport Characteristics Temperature Dependencies
but.event.date | 27.04.2017 | cs |
but.event.title | Student EEICT 2017 | cs |
dc.contributor.author | Kuparowitz, Martin | |
dc.contributor.author | Kuparowitz, Tomáš | |
dc.date.accessioned | 2020-05-07T09:40:33Z | |
dc.date.available | 2020-05-07T09:40:33Z | |
dc.date.issued | 2017 | cs |
dc.description.abstract | Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulatorsemiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV. | en |
dc.format | text | cs |
dc.format.extent | 645-649 | cs |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Proceedings of the 25st Conference STUDENT EEICT 2019. s. 645-649. ISBN 978-80-214-5735-5 | cs |
dc.identifier.isbn | 978-80-214-5496-5 | |
dc.identifier.uri | http://hdl.handle.net/11012/187182 | |
dc.language.iso | en | cs |
dc.publisher | Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
dc.relation.ispartof | Proceedings of the 23st Conference STUDENT EEICT 2017 | en |
dc.relation.uri | http://www.feec.vutbr.cz/EEICT/ | cs |
dc.rights | © Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
dc.rights.access | openAccess | en |
dc.subject | tantalum capacitor | en |
dc.subject | MIS structure | en |
dc.subject | I-V characteristics | en |
dc.subject | tunneling energy barrier | en |
dc.subject | activation energy | en |
dc.title | Tantalum Capacitor As A Mis Structure: Transport Characteristics Temperature Dependencies | en |
dc.type.driver | conferenceObject | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
eprints.affiliatedInstitution.department | Fakulta elektrotechniky a komunikačních technologií | cs |
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