Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
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The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2013, vol. 22, č. 1, s. 132-135. ISSN 1210-2512
- 2013/1