A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling
Abstract
The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V curve usually observed in the case of switching diodes and transistors was modeled as a result of the high concentration of traps that assist in the process of tunneling.
Persistent identifier
http://hdl.handle.net/11012/37032Document type
Peer reviewedDocument version
Final PDFSource
Radioengineering. 2012, vol. 21, č. 1, s. 213-218. ISSN 1210-2512http://www.radioeng.cz/fulltexts/2012/12_01_0213_0218.pdf
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- 2012/1 [71]