FGMOS Based Voltage-Controlled Grounded Resistor

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dc.contributor.authorPandey, Rishikesh
dc.contributor.authorGupta, Maneesha
dc.coverage.issue3cs
dc.coverage.volume19cs
dc.date.accessioned2016-03-11T09:19:17Z
dc.date.available2016-03-11T09:19:17Z
dc.date.issued2010-09cs
dc.description.abstractThis paper proposes a new floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor. In the proposed circuit FGMOS operating in the ohmic region is linearized by another conventional MOSFET operating in the saturation region. The major advantages of FGMOS based voltage-controlled grounded resistor (FGVCGR) are simplicity, low total harmonic distortion (THD), and low power consumption. A simple application of this FGVCGR as a tunable high-pass filter is also suggested. The proposed circuits operate at the supply voltages of +/-0.75 V. The circuits are designed and simulated using SPICE in 0.25-µm CMOS technology. The simulation results of FGVCGR demonstrate a THD of 0.28% for the input signal 0.32 Vpp at 45 kHz, and a maximum power consumption of 254 µW.en
dc.formattextcs
dc.format.extent455-459cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2010, vol. 19, č. 3, s. 455-459. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/57018
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2010/10_03_455_459.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectFloating gate MOSFETsen
dc.subjectlow-voltageen
dc.subjectvoltage-controlled grounded resistoren
dc.subjectSpice.en
dc.titleFGMOS Based Voltage-Controlled Grounded Resistoren
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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