Integrated Temperature Sensor Bipolar Core

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but.event.date26.04.2018cs
but.event.titleStudent EEICT 2018cs
dc.contributor.authorFránek, Jakub
dc.date.accessioned2019-03-04T10:05:36Z
dc.date.available2019-03-04T10:05:36Z
dc.date.issued2018cs
dc.description.abstractAnalog front-end of a bipolar transistor based smart temperature sensor was designed in 110 nm CMOS processing technology TSMC 110 and verified using simulation taking PVT variation into account. The analog front-end of the sensor achieves 3s inaccuracy of +-3.5 °C untrimmed or +-0.7 °C after single point trim over the military temperature range (-55 °C to 125 °C), requiring supply voltage of 2.7-3.63 V, consuming as little as 1μW at 1 S/s and taking up less than 0:012mm2.en
dc.formattextcs
dc.format.extent76-78cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 24th Conference STUDENT EEICT 2018. s. 76-78. ISBN 978-80-214-5614-3cs
dc.identifier.isbn978-80-214-5614-3
dc.identifier.urihttp://hdl.handle.net/11012/138173
dc.language.isoczcs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 24th Conference STUDENT EEICT 2018en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectbipolaren
dc.subjectsmart temperature sensoren
dc.subjectCMOSen
dc.subjectanalogen
dc.subjectintegrated circuiten
dc.subjectIP coreen
dc.titleIntegrated Temperature Sensor Bipolar Coreen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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